www.lambexpress.com/articles/1198-richardson-rfpd-introduces-new-family-of-650-v-gan-e-hemts-from-gan-systems
Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems
March 26, 2019
Richardson RFPD, Inc.announced the availability and full design support capabilities for anew familyof 650 V GaN E-HEMTs from GaN Systems Inc.
The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:
- Industry standard 5 mm x 6 mm PDFN packages
- Assembly using standard SMT process
- Scalable: 3.5 A to 11 A in the same footprint
- Fast, clean switching speed
- High switching frequency (20 MHz+)
- Low switching losses
- Low EMI
- High efficiency
- 开尔文森se
- Zero Qrr
- 底侧冷却
Additional key features of the GS-065-0xx-1-L include:
Part Number |
Voltage(V) |
Current RDS(on) |
Package / Size (mm) |
650 |
3.5 A |
5 x 6 PDFN |
|
650 |
8 A |
5 x 6 PDFN |
|
650 |
11 A |
5 x 6 PDFN |
To find more information, or to purchase this product today online, please visit theGS-065-0xx-1-L webpage; or please find a local sales engineer (worldwide) at本地销售支持. To learn about additional products from GaN Systems, please visit theGaN Systems storefrontwebpage.